Photosensitive materials for next-generation semiconductor lithography

Promoting development of photosensitive materials (resist materials) for next-generation semiconductor lithography

For semiconductors (LSIs, memories), the processing dimension is rapidly progressing from 20nm to 10nm in order to improve the performance. Currently, light exposure is used for semiconductor lithography, and ArF excimer lasers with a wavelength of 193 nm are used for cutting edge lithography.
In order to achieve even finer structures, shorter wavelength 13.5 nm extreme ultraviolet (EUV) lithography is expected.
We will contribute to the development of the semiconductor industry by developing photosensitive materials (resist) for EUV, which are expected to be put to practical use in the near future.

Types of resists for semiconductors and liquid crystal panels

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	For LCD panel		For semiconductor
light source	g line	i line	g line	i line	KrF laser	ArF laser	ArF laser immersion	EUV
wavelength	436nm	365nm	436nm	365nm	248nm	193nm	134nm(Execution wavelength)	13.5nm
Processing dimensions	～2000nm	～1000nm	～150nm	～90nm	～65nm	～45nm	～32nm	～16nm
Use	TV panel	Small panel	Power semiconductor	General-purpose IC	General-purpose LSI Home LSI Microcomputer	NAND memory DRAM High performance CPU System LSI Microcomputer	Advanced NAND memory Advanced DRAM Ultra high performance CPU High performance system LSI	State-of-the-art memory processor
market	Growing demand in emerging countries		Growing demand in emerging countries		Slow rise	Expansion	Rapid expansion	Commercially available prototype exposure machine Under development of resist material.

Research and development